APT65GP60JDQ2
Microsemi Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 130A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PUFM-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- J-STD-609 Codee1
- Case ConnectionISOLATED
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)431
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)85
- Gate-emitter Voltage-Max (V)30
- Turn-off Time-Nom (toff) (ns)220
- Collector Current-Max (IC) (A)130
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)600
- Screening Level / Reference StandardUL RECOGNIZED
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APT65GP60JDQ2