APT6040BNR-GULLWING
ADVANCED POWER TECHNOLOGY INC
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 18A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSFM-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)18 A
- DS Breakdown Voltage-Min600 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)1210 mJ
- Power Dissipation Ambient-Max310 W
- Drain-source On Resistance-Max0.4 ohm
- Pulsed Drain Current-Max (IDM)72 A
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APT6040BNR-GULLWING