APT6015JVR
ADVANCED POWER TECHNOLOGY INC
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 35A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PUFM-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureHIGH VOLTAGE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)450
- Drain Current-Max (ID) (A)35
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)600
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Operating Temperature-Max (Cel)150
- Avalanche Energy Rating (Eas) (mJ)2500
- Pulsed Drain Current-Max (IDM) (A)140
- Drain-source On Resistance-Max (ohm)0.15
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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APT6015JVR