APT5510B2FLL
Microsemi Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 49A I(D), 550V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)49 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min550 V
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)568 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)2500 mJ
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.1 ohm
- Pulsed Drain Current-Max (IDM)196 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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APT5510B2FLL