APT50M60BFN
ADVANCED POWER TECHNOLOGY INC
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 78A I(D), 500V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-MDFM-W10
- ConfigurationSERIES, 2 ELEMENTS
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals10
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)78 A
- DS Breakdown Voltage-Min500 V
- Power Dissipation-Max (Abs)780 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max830 W
- Drain-source On Resistance-Max0.06 ohm
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APT50M60BFN