APT40N60B2CFE3 by Microsemi Corporation | Sourcengine

Microsemi Corporation APT40N60B2CFE3

Lifecycle status
Transferred
REACH
REACH compliant
Description
Power Field-Effect Transistor, 40A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
40
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
600
Avalanche Energy Rating (Eas) (mJ)
690
Pulsed Drain Current-Max (IDM) (A)
80
Drain-source On Resistance-Max (ohm)
0.11