APT35GP120B2DF2
Microsemi Corporation
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 96A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)96 A
- Power Dissipation-Max (Abs)543 W
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max1200 V
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APT35GP120B2DF2
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APT35GP120B2DF2