APT33N90JCU3 by Microsemi Corporation | Sourcengine

Microsemi Corporation APT33N90JCU3

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 33A I(D), 900V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
AVALANCHE RATED, ULTRA-LOW RESISTANCE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
290
Drain Current-Max (ID) (A)
33
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
900
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
1940
Pulsed Drain Current-Max (IDM) (A)
75
Drain-source On Resistance-Max (ohm)
0.12