APT25GF100BN by ADVANCED POWER TECHNOLOGY INC | Sourcengine

ADVANCED POWER TECHNOLOGY INC APT25GF100BN

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 25A I(C), 1000V V(BR)CES, N-Channel, TO-247
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

VCEsat-Max
4 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-247
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Additional Feature
FAST SWITCHING
Fall Time-Max (tf)
800 ns
Number of Elements
1
Rise Time-Max (tr)
130 ns
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Turn-on Time-Max (ton)
40 ns
Turn-on Time-Nom (ton)
20 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Max (toff)
60 ns
Turn-off Time-Nom (toff)
40 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
25 A
Power Dissipation-Max (Abs)
147 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6 V
Collector-emitter Voltage-Max
1000 V
Power Dissipation Ambient-Max
147 W