APT20GN60S
Microsemi Corporation
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountYES
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)136
- Gate-emitter Voltage-Max (V)30
- Collector Current-Max (IC) (A)40
- Operating Temperature-Max (Cel)175
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)600
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APT20GN60S
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APT20GN60S