APT20GF120BRD
Microsemi Corporation
- Lifecycle statusTransferred
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Fall Time-Max (ns)190
- Polarity/Channel TypeN-CHANNEL
- Rise Time-Max (tr) (ns)130
- Power Dissipation-Max (W)200
- Gate-emitter Voltage-Max (V)20
- Collector Current-Max (IC) (A)20
- Operating Temperature-Max (Cel)150
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
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APT20GF120BRD
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APT20GF120BRD