APT150GN120J
Microsemi Corporation
- Lifecycle statusTransferred
- DescriptionInsulated Gate Bipolar Transistor, 215A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PUFM-X4
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- J-STD-609 Codee1
- Case ConnectionISOLATED
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureLOW CONDUCTION LOSS
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)625
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)120
- Gate-emitter Voltage-Max (V)30
- Turn-off Time-Nom (toff) (ns)955
- Collector Current-Max (IC) (A)215
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardUL RECOGNIZED
0 suppliers available to buy or to bid for APT150GN120J
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
APT150GN120J