APT100GT120JU2
Microsemi Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 140A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.1
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureAVALANCHE RATED, LOW CONDUCTION LOSS
- Number of Elements1
- Number of Terminals4
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)480
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)335
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)610
- Collector Current-Max (IC) (A)140
- Operating Temperature-Max (Cel)150
- Collector-emitter Voltage-Max (V)1200
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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APT100GT120JU2