APT100GN60LDQ4G
Microsemi Corporation
- Lifecycle statusTransferred
- RoHSRoHS compliant
- DescriptionInsulated Gate Bipolar Transistor, 229A I(C), 600V V(BR)CES, N-Channel, TO-264AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-264AA
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- J-STD-609 Codee1
- Case ConnectionCOLLECTOR
- Terminal FinishTIN SILVER COPPER
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)625
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)96
- Gate-emitter Voltage-Max (V)30
- Turn-off Time-Nom (toff) (ns)435
- Collector Current-Max (IC) (A)229
- Operating Temperature-Max (Cel)175
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)600
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APT100GN60LDQ4G