APT1001RBN
Microsemi Corporation
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 11A I(D), 1000V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247AD
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)11 A
- DS Breakdown Voltage-Min1000 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max1 ohm
- Pulsed Drain Current-Max (IDM)44 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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APT1001RBN