APA2N70K by Advanced Power Electronics Corp. | Sourcengine

Advanced Power Electronics Corp. APA2N70K

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 0.35A I(D), 600V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.35 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
0.5 mJ
Drain-source On Resistance-Max
10 ohm
Pulsed Drain Current-Max (IDM)
1.4 A