AP9962GMA by Advanced Power Electronics Corp. | Sourcengine

Advanced Power Electronics Corp. AP9962GMA

Lifecycle status
Contact Mfr
REACH
REACH compliant
Description
Power Field-Effect Transistor, 36A I(D), 40V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
36
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
40
Operating Temperature-Max (Cel)
150
Pulsed Drain Current-Max (IDM) (A)
120
Drain-source On Resistance-Max (ohm)
0.02