AP9576GM by Advanced Power Electronics Corp. | Sourcengine

Advanced Power Electronics Corp. AP9576GM

Lifecycle status
Contact Mfr
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 60V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
60 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
3
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.09 ohm
Pulsed Drain Current-Max (IDM)
20 A
Time@Peak Reflow Temperature-Max (s)
30