AP72T03GJ-HF
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 62A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSIP-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-251
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)62
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Avalanche Energy Rating (Eas) (mJ)29
- Pulsed Drain Current-Max (IDM) (A)190
- Drain-source On Resistance-Max (ohm)0.009
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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AP72T03GJ-HF