AP50WN1K0H
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)83.3
- Drain Current-Max (ID) (A)7
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)500
- Feedback Cap-Max (Crss) (pF)12
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)24.5
- Pulsed Drain Current-Max (IDM) (A)21
- Drain-source On Resistance-Max (ohm)1.03
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AP50WN1K0H