AP4523GM
Advanced Power Electronics Corp.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 40V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min40 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.03 ohm
- Pulsed Drain Current-Max (IDM)30 A
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AP4523GM
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AP4523GM