AP4435GYT-HF
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 11A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)11 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.021 ohm
- Pulsed Drain Current-Max (IDM)40 A
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AP4435GYT-HF