AP4226AGM
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 8.7A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Additional FeatureULTRA-LOW RESISTANCE
- Number of Elements2
- Number of Terminals8
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)8.7 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.018 ohm
- Pulsed Drain Current-Max (IDM)40 A
0 suppliers available to buy or to bid for AP4226AGM
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
AP4226AGM
Send an RFQ
AP4226AGM