- Lifecycle statusTransferred
- DescriptionRF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Junction FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-PBGA-B9
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- FET TechnologyJUNCTION
- J-STD-609 Codee0
- Operating ModeDEPLETION MODE
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals9
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandS BAND
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)10
- Operating Temperature-Max (Cel)80
- Power Dissipation Ambient-Max (W)1.8
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AP4