AP30G120BSW-HF by Advanced Power Electronics Corp. | Sourcengine

Advanced Power Electronics Corp. AP30G120BSW-HF

Lifecycle status
Contact Mfr
RoHS
RoHS compliant
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Fall Time-Max (tf)
860 ns
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
85 ns
Gate-emitter Voltage-Max
30 V
Turn-off Time-Nom (toff)
555 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
60 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
208 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
7 V
Collector-emitter Voltage-Max
1200 V