AP2R803AGMT-HF
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-N8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min30 V
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)45 mJ
- Drain-source On Resistance-Max0.0042 ohm
- Pulsed Drain Current-Max (IDM)240 A
0 suppliers available to buy or to bid for AP2R803AGMT-HF
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
AP2R803AGMT-HF
Send an RFQ
AP2R803AGMT-HF