AP2608GY
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 0.57A I(D), 150V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.57 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min150 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max2.6 ohm
- Pulsed Drain Current-Max (IDM)2 A
0 suppliers available to buy or to bid for AP2608GY
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
AP2608GY
Send an RFQ
AP2608GY