AP2608AGK-HF
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 0.92A I(D), 150V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.92 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min150 V
- Operating Temperature-Max150 Cel
- Moisture Sensitivity Level3
- Power Dissipation-Max (Abs)2.8 W
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max1.5 ohm
- Pulsed Drain Current-Max (IDM)3 A
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AP2608AGK-HF