AP07SL60H-A by Advanced Power Electronics Corp. | Sourcengine

Advanced Power Electronics Corp. AP07SL60H-A

Lifecycle status
Contact Mfr
REACH
REACH compliant
Description
Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
650 V
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
5 mJ
Drain-source On Resistance-Max
0.6 ohm
Pulsed Drain Current-Max (IDM)
18 A