AP04N70BI
Advanced Power Electronics Corp.
- Lifecycle statusContact Mfr
- REACHREACH compliant
- DescriptionTrans MOSFET N-CH 600V 4A 3-Pin(3+Tab) TO-220CFM
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-220AB
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4 A
- Transistor ApplicationSWITCHING
- DS Breakdown Voltage-Min600 V
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)8 mJ
- Drain-source On Resistance-Max2.4 ohm
- Pulsed Drain Current-Max (IDM)15 A
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AP04N70BI