AOD419L
Alpha and Omega Semiconductor
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 20A I(D), 40V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-252
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)20 A
- Feedback Cap-Max (Crss)90 pF
- DS Breakdown Voltage-Min40 V
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)50 W
- Transistor Element MaterialSILICON
- Power Dissipation Ambient-Max2.5 W
- Drain-source On Resistance-Max0.04 ohm
- Pulsed Drain Current-Max (IDM)60 A
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AOD419L