AOB438 by Alpha and Omega Semiconductor | Sourcengine

Alpha and Omega Semiconductor AOB438

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 50A I(D), 25V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
50 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
280 pF
DS Breakdown Voltage-Min
25 V
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Drain-source On Resistance-Max
0.01 ohm
Pulsed Drain Current-Max (IDM)
150 A