- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 13.7A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyTRENCH MOSFET
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)3.1
- Drain Current-Max (ID) (A)13.7
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)16
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)168
- Turn-off Time-Max (toff) (ns)86
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)3.1
- Pulsed Drain Current-Max (IDM) (A)60
- Drain-source On Resistance-Max (ohm)0.0105
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AO4420