AH157-85
THOMSON-CSF SEMICONDUCTORS
- Lifecycle statusTransferred
- DescriptionVariable Capacitance Diode, Very High Frequency to KA Band, 4.92pF C(T), 30V, Gallium Arsenide, Abrupt
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.80
- SB Code8541.10.00.80
- Diode TypeVARIABLE CAPACITANCE DIODE
- JESD-30 CodeO-XEMW-F2
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormFLAT
- Frequency BandVERY HIGH FREQUENCY TO KA BAND
- DLA QualificationNot Qualified
- Terminal PositionEND
- Number of Elements1
- Quality Factor-Min4000
- Number of Terminals2
- Package Body MaterialUNSPECIFIED
- Diode Element MaterialGALLIUM ARSENIDE
- Diode Cap Tolerance (%)20
- Reverse Current-Max (uA)0.1
- Reverse Test Voltage (V)10
- Breakdown Voltage-Min (V)30
- Diode Capacitance-Nom (pF)4.92
- Diode Capacitance Ratio-Min4
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
- Variable Capacitance Diode ClassificationABRUPT
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AH157-85