AFV121KHSR5 by Freescale Semiconductor, Inc. | Sourcengine

Freescale Semiconductor, Inc. AFV121KHSR5

Lifecycle status
Transferred
RoHS
RoHS compliant
Description
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-CDFM-F4
Configuration
COMMON SOURCE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
18.5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
112
Feedback Cap-Max (Crss) (pF)
2.5
Operating Temperature-Max (Cel)
225
Operating Temperature-Min (Cel)
-40