AFV09P350-04GNR3
Freescale Semiconductor, Inc.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionRF POWER FIELD-EFFECT TRANSISTOR
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- ApplicationAMPLIFIER
- JESD-30 CodeR-PDSO-G4
- ConfigurationDual
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee3
- Operating ModeENHANCEMENT MODE
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- Power Gain-Min (Gp) (dB)18.5
- Moisture Sensitivity Level3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)105
- Operating Temperature-Max (Cel)225
- Operating Temperature-Min (Cel)-40
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AFV09P350-04GNR3