AFP02N8-213
Skyworks Solutions,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.75
- SB Code8541.21.00.80
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)12 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.09 A
- Highest Frequency BandX BAND
- DS Breakdown Voltage-Min6 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)245
- Power Dissipation Ambient-Max0.3 W
- Time@Peak Reflow Temperature-Max (s)30
0 suppliers available to buy or to bid for AFP02N8-213
Send an RFQ
Your RFQ will be directly sent to our expert: Pari
Send an RFQ
AFP02N8-213