AFP02N3-213
ALPHA INDUSTRIES INC
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Terminal PositionRADIAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Power Gain-Min (Gp)8.5 dB
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- DS Breakdown Voltage-Min4 V
- Transistor Element MaterialSILICON
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AFP02N3-213
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AFP02N3-213