AFP02N3-104
Skyworks Solutions,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionISOLATED
- Additional FeatureLOW NOISE
- Power Gain-Min (Gp)13 dB
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKU BAND
- Transistor ApplicationAMPLIFIER
- DS Breakdown Voltage-Min6 V
- Transistor Element MaterialGALLIUM ARSENIDE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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AFP02N3-104
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AFP02N3-104