AFP02N2-55
ALPHA INDUSTRIES INC
- Lifecycle statusTransferred
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-CRDB-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StyleDISK BUTTON Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals4
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKA BAND
- Power Gain-Min (Gp) (dB)8.5
- Drain Current-Max (ID) (A)0.09
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)4
- Operating Temperature-Max (Cel)175
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AFP02N2-55
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AFP02N2-55