AFP02N2-00
ALPHA INDUSTRIES INC
- Lifecycle statusTransferred
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XUUC-N6
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Additional FeatureLOW NOISE
- Number of Elements1
- Number of Terminals6
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandKA BAND
- Power Gain-Min (Gp) (dB)9.5
- Drain Current-Max (ID) (A)0.09
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)4
- Operating Temperature-Max (Cel)175
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AFP02N2-00