AF100-32
Skyworks Solutions,Inc.
- Lifecycle statusDiscontinued
- DescriptionRF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- ConfigurationSINGLE
- FET TechnologyMETAL SEMICONDUCTOR
- Operating ModeDEPLETION MODE
- Case ConnectionSOURCE
- Number of Elements1
- Power Gain-Min (Gp)5.5 dB
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)0.09 A
- Highest Frequency BandKU BAND
- DS Breakdown Voltage-Min4 V
- Operating Temperature-Max175 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max0.2 W
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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AF100-32
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AF100-32