ADP9003-23
ASI Semiconductor, Inc.
- Lifecycle statusActive-Unconfirmed
- DescriptionMixer Diode, Low Barrier, X Band, 1800ohm Z(V) Max, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.10.00.60
- SB Code8541.10.00.60
- Diode TypeMIXER DIODE
- TechnologySCHOTTKY
- JESD-30 CodeO-CEMW-N2
- ConfigurationSINGLE
- Impedance-Max1800 ohm
- Impedance-Min1200 ohm
- Package ShapeROUND
- Package StyleMICROWAVE Meter
- Surface MountYES
- Terminal FormNO LEAD
- Frequency BandX BAND
- Terminal PositionEND
- Number of Elements1
- Number of Terminals2
- Qualification StatusNot Qualified
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Diode Element MaterialSILICON
- Pulsed Input Power-Max0.1 W
- Type of Schottky BarrierLOW BARRIER
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-65 Cel
- Tangential Signal Sensitivity-Min-55 dBm
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ADP9003-23