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7M820S75CB

Integrated Device Technology, Inc.

Integrated Device Technology, Inc. 7M820S75CB
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    SEPARATE
  • Technology
    CMOS
  • JESD-30 Code
    R-XDIP-T64
  • Memory Width
    8
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e0
  • Memory IC Type
    SRAM MODULE
  • Operating Mode
    SYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    MILITARY
  • Terminal Position
    DUAL
  • Memory Organization
    128KX8
  • Number of Terminals
    64
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    75
  • Number of Words Code
    128K
  • Memory Density (bits)
    1048576
  • Package Body Material
    CERAMIC
  • Output Characteristics
    3-STATE
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    131072
  • Package Equivalence Code
    DIP64,.9
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55
  • Screening Level / Reference Standard
    MIL-STD-883 Class B (Modified)

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7M820S75CB
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7M820S75CB