71V65803S133BQGI
Renesas Electronics Corp.
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionZBT SRAM, 512KX18, 4.2ns, CMOS, PBGA165
- Category
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)13
- Length (mm)15
- JESD-30 CodeR-PBGA-B165
- Memory Width18
- Package CodeTBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeZBT SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureBURST COUNTER
- Memory Organization512KX18
- Number of Functions1
- Number of Terminals165
- Terminal Pitch (mm)1
- Access Time-Max (ns)4.2
- Number of Words Code512K
- Memory Density (bits)9437184
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)3.465
- Supply Voltage-Min (V)3.135
- Supply Voltage-Nom (V)3.3
- Number of Words (words)524288
- Standby Current-Max (A)0.06
- Standby Voltage-Min (V)3.14
- Supply Current-Max (mA)320
- Package Equivalence CodeBGA165,11X15,40
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
- Time@Peak Reflow Temperature-Max (s)30
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