71V2556S166BGGI8 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. 71V2556S166BGGI8

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Application Specific SRAM, 128KX36, 3.5ns, CMOS, PBGA119
Category
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
22
JESD-30 Code
R-PBGA-B119
Memory Width
36
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
PIPELINED ARCHITECTURE
Memory Organization
128KX36
Number of Functions
1
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
3.5
Number of Words Code
128K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
2.36
Supply Voltage-Max (V)
3.465
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
131072
Standby Current-Max (A)
0.045
Standby Voltage-Min (V)
3.14
Supply Current-Max (mA)
360
Package Equivalence Code
BGA119,7X17,50
Clock Frequency-Max (MHz)
166
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Time@Peak Reflow Temperature-Max (s)
30