70V05L35JG by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. 70V05L35JG

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Multi-Port SRAM, 8KX8, 35ns, CMOS, PQCC68
Category
Semiconductors Memory ICs SRAMs MULTI-PORT SRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
24.2062
Length (mm)
24.2062
JESD-30 Code
S-PQCC-N68
Memory Width
8
Package Code
QCCN
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
J-STD-609 Code
e3
Memory IC Type
MULTI-PORT SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn) - annealed
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
QUAD
Additional Feature
INTERRUPT FLAG; SEMAPHORE; AUTOMATIC POWER-DOWN
Memory Organization
8KX8
Number of Functions
1
Number of Terminals
68
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
35
Number of Words Code
8K
Memory Density (bits)
65536
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
4.572
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
8192
Standby Current-Max (A)
0.0025
Standby Voltage-Min (V)
3
Supply Current-Max (mA)
155
Package Equivalence Code
LDCC68,1.0SQ
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
30