70T651S12BCG8 by Renesas Electronics Corp. | Sourcengine

Renesas Electronics Corp. 70T651S12BCG8

Lifecycle status
Active
RoHS
RoHS compliant
REACH
REACH compliant
Description
Application Specific SRAM, 256KX36, 12ns, CMOS, PBGA256
Category
Semiconductors Memory ICs SRAMs APPLICATION SPECIFIC SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
17
Length (mm)
17
JESD-30 Code
S-PBGA-B256
Memory Width
36
Package Code
LBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
APPLICATION SPECIFIC SRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
2
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
256KX36
Number of Functions
1
Number of Terminals
256
Terminal Pitch (mm)
1
Access Time-Max (ns)
12
Number of Words Code
256K
Memory Density (bits)
9437184
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.5
Supply Voltage-Max (V)
2.6
Supply Voltage-Min (V)
2.4
Supply Voltage-Nom (V)
2.5
Number of Words (words)
262144
Standby Current-Max (A)
0.01
Standby Voltage-Min (V)
2.4
Supply Current-Max (mA)
355
Package Equivalence Code
BGA256,16X16,40
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
30