5SNE1000E330300
ABB Limited
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PUFM-X9
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.9
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional FeatureUL RECOGNIZED
- Number of Elements2
- Number of Terminals9
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)9800
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)790
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)2100
- Collector Current-Max (IC) (A)1000
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-50
- Gate-emitter Thr Voltage-Max (V)7
- Collector-emitter Voltage-Max (V)3300
- Screening Level / Reference StandardIEC-61287; IEC-60664-1; IEC-60747, -1, -2, -9, -15
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5SNE1000E330300