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5962R9676602VXX

HARRIS SEMICONDUCTOR

HARRIS SEMICONDUCTOR 5962R9676602VXX
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • Technology
    CMOS
  • Total Dose
    100k Rad(Si) V
  • Width (mm)
    15.24
  • JESD-30 Code
    R-GDIP-T40
  • Memory Width
    8
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Memory IC Type
    MULTI-PORT SRAM
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    MILITARY
  • Terminal Position
    DUAL
  • Additional Feature
    TWO PROGRAMMABLE 8-BIT I/O PORTS
  • Memory Organization
    256X8
  • Number of Functions
    1
  • Number of Terminals
    40
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    500
  • Number of Words Code
    256
  • Memory Density (bits)
    2048
  • Package Body Material
    CERAMIC, GLASS-SEALED
  • Seated Height-Max (mm)
    5.72
  • Supply Voltage-Max (V)
    5.5
  • Supply Voltage-Min (V)
    4.5
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    256
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55
  • Screening Level / Reference Standard
    MIL-STD-883

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5962R9676602VXX